Description

The performance limit of monocrystalline silicon solar cells is almost reached. Onlymarginal effects are limiting the excess carrier lifetime of nowadays used materials.Nonetheless it is interesting to investigate and characterize the limiting effects toimprove the performance even further and to deepen the understanding, enabling newapproaches and novel cell structures.
This thesis tries to characterize limiting defect in high standard Gallium doped siliconvia lifetime spectroscopy. To assess the validity of the results, the limits of thiscommonly used method (lifetime spectroscopy) are analyzed by evaluation of simulatedlifetime data. Further, a guideline for future lifetime evaluations is given which canimprove the outcome of the complex evaluation and helps differentiate between bulkand surface effects.